Type Designator: AON7403
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V) 8.7. Aon7402.pdf Size:301K aosemi. MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted. The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the.
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 25 W
Maximum Drain-Source Voltage |Vds|: 30 V
![7121 Mosfet 7121 Mosfet](/uploads/1/3/7/2/137260235/886156709.webp)
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 29 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 8.5 nS
Drain-Source Capacitance (Cd): 240 pF
Maximum Drain-Source On-State Resistance (Rds): 0.018 Ohm
Package: DFN3X3EP
AON7403 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
![7121 Mosfet 7121 Mosfet](/uploads/1/3/7/2/137260235/377301648.jpg)
AON7403 Datasheet (PDF)
0.1. aon7403.pdf Size:172K _aosemi
AON740330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7403 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -29Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
8.1. aon7400a.pdf Size:320K _aosemi
AON7400A30V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7400A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)
8.2. aon7407.pdf Size:242K _aosemi Nintendo online price year.
AON740720V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AON7407 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-4.5V)
8.3. aon7401.pdf Size:269K _aosemi
AON740130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7401 uses advanced trench technology toprovide excellent RDS(ON), and ultra-low low gate charge ID (at VGS=-10V) -35Awith a 25V gate rating. This device is suitable for use as a RDS(ON) (at VGS=-10V)
8.4. aon7404.pdf Size:233K _aosemi
AON740420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7404 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 20Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)
8.5. aon7405.pdf Size:319K _aosemi
AON740530V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON7405 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS= -10V) -50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS= -10V)
8.6. aon7409.pdf Size:323K _aosemi
AON740930V P-Channel MOSFETGeneral Description Product SummaryVDS The AON7409 combines advanced trench MOSFET -30Vtechnology with a low resistance package to provide ID (at VGS=-10V) -32Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
7121 Mosfet E
8.7. aon7402.pdf Size:301K _aosemi
AON740230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7402 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 39AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)
8.8. aon7408.pdf Size:262K _aosemi
AON740830V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7408 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 18AThis device is suitable for use in general purpose RDS(ON) (at VGS=10V)
8.9. aon7400.pdf Size:199K _aosemi
AON740030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7400 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 26AThis device is suitable for use in DC - DC converters and RDS(ON) (at VGS=10V)
8.10. aon7404g.pdf Size:344K _aosemi Palfinger forklift.
AON7404G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 20A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)
8.11. aon7406.pdf Size:270K _aosemi
AON740630V N-Channel MOSFETGeneral Description Product SummaryVDS30V The AON7406 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25AThis device is suitable for use in SMPS and general RDS(ON) (at VGS=10V)
7121 Mosfet Drive
Datasheet: AON7280, AON7290, AON7292, AON7296, AON7400, AON7400A, AON7401, AON7402, 2N5484, AON7404, AON7405, AON7406, AON7407, AON7408, AON7409, AON7410, AON7412.
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